Fully aligned via in ground rule region

ABSTRACT

The present disclosure relates to semiconductor structures and, more particularly, to fully aligned via structures and methods of manufacture. The structure includes: a plurality of minimum ground rule conductive structures formed in a dielectric material each of which comprises a recessed conductive material therein; at least one conductive structure formed in the dielectric material which is wider than the plurality of minimum ground rule conductive structures; an etch stop layer over a surface of the dielectric layer with openings to expose the conductive material of the least one conductive structure and the recessed conductive material of a selected minimum ground rule conductive structure; and an upper conductive material fully aligned with and in direct electrical contact with the at least one conductive structure and the selected minimum ground rule conductive structure, through the openings of the etch stop layer.

FIELD OF THE INVENTION

The present disclosure relates to semiconductor structures and, more particularly, to fully aligned via structures and methods of manufacture.

BACKGROUND

In advanced technology nodes, wiring structures are becoming ever smaller with minimum ground rules reaching feature sizes of 10 nm and less. In integrated circuits, the wiring structures on different wiring layers can be interconnected by fully aligned vias. The fully aligned vias provide the benefit of landing directly on the wiring structures having the minimum ground rule, as well as larger sized features.

In current fabrication processes, the fully aligned vias are formed in a same manner for accessing both the wiring structures having the minimum ground rule and the larger sized features. This results in a reduced volume of conductor material within the larger sized features, increasing its overall resistance.

SUMMARY

In an aspect of the disclosure, a structure comprises: a plurality of minimum ground rule conductive structures formed in a dielectric material each of which comprises a recessed conductive material therein; at least one conductive structure formed in the dielectric material which is wider than the plurality of minimum ground rule conductive structures; an etch stop layer over a surface of the dielectric layer with openings to expose the conductive material of the least one conductive structure and the recessed conductive material of a selected minimum ground rule conductive structure; and an upper conductive material fully aligned with and in direct electrical contact with the at least one conductive structure and the selected minimum ground rule conductive structure, through the openings of the etch stop layer.

In an aspect of the disclosure, a structure comprises: a plurality of minimum ground rule structures each of which comprises a recessed conductive material and having a minimum insulator spacing therebetween; at least one wiring structure having a larger dimension than the plurality of minimum ground rule structures; at least one wiring structure comprising a liner material and a conductive material which is different than the recessed conductive material; and an upper interconnect structure fully aligned with and in direct electrical contact with a selected minimum ground rule structure and at least one wiring structure.

In an aspect of the disclosure, a method comprises: depositing a first conductive material to fill trenches of minimum feature dimensions resulting in wire structures and another wire structure with a larger width than the minimum feature dimensions; recessing the first conductive material for the wire structures; forming fully aligned vias with a selected one of the wire structures and the other wire structure with the larger width; and depositing conductive material in the fully aligned vias to be in electrical contact with the recessed first conductive material and conductive material of the wire structure with the larger width.

BRIEF DESCRIPTION OF THE DRAWINGS

The present disclosure is described in the detailed description which follows, in reference to the noted plurality of drawings by way of non-limiting examples of exemplary embodiments of the present disclosure.

FIG. 1 shows a structure with minimum width features and wider features comprising an alternative metal material, amongst other features, and respective fabrication processes in accordance with aspects of the present disclosure.

FIG. 2 shows the minimum width features with the alternative metal material and the wider features with conductive material fill, amongst other features, and respective fabrication processes in accordance with aspects of the present disclosure.

FIG. 3 shows alternative metal material recessed within the minimum width features, amongst other features, and respective fabrication processes in accordance with aspects of the present disclosure.

FIG. 4 shows fully aligned via structures in electric contact with selected minimum width features and the wider feature, amongst other features, and respective fabrication processes in accordance with aspects of the present disclosure.

FIGS. 5-8 show structures with minimum width features and wider features, amongst other features, and respective fabrication processes in accordance with additional aspects of the present disclosure.

DETAILED DESCRIPTION

The present disclosure relates to semiconductor structures and, more particularly, to fully aligned via structures and methods of manufacture. More specifically, the present disclosure provides independent control of minimum width lines (e.g., interconnects or other wiring structures) and wider lines for fully aligned via structures. By implementing the methods and structures described herein, it is now possible to enable dual metallization with fully aligned via (FAV) structures for improved via and interconnect resistance. Additional benefits include, e.g., improved wide line resistance over interconnects recessed on all lines and improved via resistance for selective wiring structures.

In embodiments, the method described herein includes depositing a layer of alternative metal material, e.g., Ru or Co, in interconnect structures, used for minimum width conductive lines or features (e.g., minimum width interconnect structures). The integration scheme further includes isotopically removing the alternative metal in wider features, e.g., wider conductive lines or features, while leaving the alternative metal material in minimum width features (minimum ground rule features). The wider features can then be filled with conductor material, e.g., Cu; whereas, the alternate metal material in the minimum width features is recessed, followed by a conductive material fill process for upper wiring layers to selected minimum width features. As the conductive material in the wider features is not recessed, a larger volume of material remains in the wider features to reduce its overall resistance (compared to conventional structures).

The conductive material fill process for the upper wiring layers will be in direct electrical contact with the recessed alternate metal material of selected minimum width features as well as the conductor material of the wider features. In alternative embodiments, the wider features can be filled with the alternative metal material, followed by the recessing and conductive material fill processes for forming upper wiring layers in contact with the selected minimum width features and the wider features.

The methods described herein result in structures with minimum width interconnects comprising alternative metal material, e.g., Ru or Co, and Cu wide interconnects. In this way, the resultant structure includes minimum width feature, e.g., interconnect structures, with dual conductor material on a same wafer with single material minimum width feature. In certain embodiments, wider interconnects can also include dual conductor material, e.g., copper and Ru. Additionally, the structures described herein can include alterative metal, e.g., Ru, which is recessed in the minimum area without recessing conductive material, e.g., Cu, in the wider line or feature. The resultant structures will have a 3D via/line interface which enables increased contact area.

The fully aligned via structures of the present disclosure can be manufactured in a number of ways using a number of different tools. In general, though, the methodologies and tools are used to form structures with dimensions in the micrometer and nanometer scale. The methodologies, i.e., technologies, employed to manufacture the fully aligned via structures of the present disclosure have been adopted from integrated circuit (IC) technology. For example, the structures are built on wafers and are realized in films of material patterned by photolithographic processes on the top of a wafer. In particular, the fabrication of the fully aligned via structures uses three basic building blocks: (i) deposition of thin films of material on a substrate, (ii) applying a patterned mask on top of the films by photolithographic imaging, and (iii) etching the films selectively to the mask.

FIG. 1 shows a structure with minimum width features and wider features, amongst other features, and respective fabrication processes in accordance with aspects of the present disclosure. More specifically, the structure 10 of FIG. 1 includes a substrate 12, e.g., interlevel dielectric material, having a plurality of trenches 14 a, 14 b, 14 c. In embodiments, the trenches 14 a, 14 b will be used to form minimum width features, e.g., minimum ground rule interconnect structures or wire structures; whereas, the trenches 14 c will be used to form a wider width feature. The interlevel dielectric material 12 can be an oxide based material, for example SiO₂ or SiCOH.

The plurality of wires 14 a, 14 b, 14 c can be formed by conventional lithography and etching processes. For example, a resist formed over the interlevel dielectric material 12 is exposed to energy (light) to form a pattern (opening). An etching process with a selective chemistry, e.g., reactive ion etching (RIE), will be used to form one or more trenches 14 a, 14 b, 14 c in the substrate 12 through the openings of the resist. In embodiments, the plurality of trenches 14 a, 14 b can have a width of about 12 nm to 24 nm and a pitch of about 40 nm or below; although other dimensions are contemplated herein depending on the particular technology node.

Still referring to FIG. 1, following resist removal, a liner 16 is formed over the exposed surfaces of the interlevel dielectric material 12 including within the wire structures 14 a, 14 b, 14 c. The liner 16 can be a TiN, Ta, TaN, Co or Ru liner deposited by a conventional deposition process, e.g., chemical vapor deposition (CVD). An alternative metal material 18, e.g., Ru or Co, is deposited over the liner 16. The alternative metal material 18 (also referred to as a primary metal material) can be deposited by a conventional CVD process to fill the wire structures 14 a, 14 b. In more specific embodiments, the alternative metal material 18 is deposited to a thickness of about 7 nm to 12 nm to ensure complete fill of the wire structures 14 a, 14 b; although other thicknesses are also contemplated, depending on the particular technology node, e.g., dimensions of the wire structures 14 a, 14 b. An anneal process is performed on the alternative metal material 18.

As shown in FIG. 2, the alternative metal material 18 is removed from the wire structure 14 c and the upper surfaces of the substrate 12. The alternative metal material 18 can be removed by a conventional isotropic etching process, e.g., reactive ion etching (RIE), followed by a wet clean process. As should be understood by those of skill in the art, the isotropic etching process can be a timed etching process that will remove all of the material from the upper surface of the interlevel dielectric material 12 and within the wire structure 14 c, while leaving the alternative metal material 18 in the wire structure 14 a, 14 b. The conventional isotropic etching process can be a dry process or a wet process.

Following the isotropic etching process, a metallization process is performed to fill the wire structure 14 c. In particular, a barrier layer 20 can be deposited on the surfaces of the substrate 12 and within the wire structure 14 c. The barrier layer 20 can be a TiN, Ta or TaN material deposited by conventional CVD process, plasma enhanced CVD (PEVCD) process or atomic layer deposition (ALD) process, as examples. The barrier layer 20 can be deposited to a thickness of about 4 nm or less. A liner 22 is deposited on the barrier layer 20 to a thickness of about 4 nm or less. In embodiments, the liner 22 can be a TiN material, TaN material, Co, Ru or other known liner material. A metallization (conductor material) is deposited (e.g., by conventional deposition processes (e.g., CVD)) over the liner 22, completely filling the wire structure 14 c. In embodiments, the metallization can be a copper material fill process; although other metal or metal alloys are contemplated herein. In this way, a wide feature, e.g., wide interconnect structure, and minimum width features can be formed in the wire structures 14 a, 14 b, 14 c. Hereinafter, the minimum width features and the wide feature and will be interchangeably referred as reference numerals 14 a, 14 b and 14 c, respectively.

In FIG. 3, any conductor material 24 on the surfaces of the substrate 12 can be removed by a conventional chemical mechanical polishing (CMP) process. Accordingly, the conductor material 24 will be planar with the surface of the interlevel dielectric material 12, e.g., is planar with the dielectric material 12 on a same level as the plurality of minimum ground rule structures (wire structures 14 a, 14 b). Following the CMP process, the alternative metal material 18 and liner 16 in the wire structures 14 a, 14 b can be recessed, as shown representatively by reference numeral 26. On the other hand, the conductor material 24 in the wire structure 14 c remains planar with the interlevel dielectric layer 12 (on a same level as the plurality of minimum ground rule structures, leaving wide lines with full volume conductor. This will provide improved resistance characteristics compared to conventional structures which include recessed portions.

In embodiments, the recess 26 can be about 5 nm to about 12 nm; although others dimensions are contemplated herein with the understanding that such recess should maintain a minimum insulation spacing between the minimum width features 14 a, 14 b. This minimum insulation spacing will ensure that the minimum width features, e.g., interconnects, will not short together, hence maintaining the reliability of the integrated circuit. The recess 26 can be fabricated by a RIE process or wet chemical etch process with a selective chemistry. By using a selective chemistry, it is not necessary to use a masking process to form the recess 26.

As further shown in FIG. 4, fully aligned interconnect structures 32 a, 32 b are formed in an upper interlevel dielectric material 30. The fully aligned interconnect structures 32 a, 32 b are in direct electrical contact with the minimum width feature 14 b and the wider feature (e.g., wire structure) 14 c. To form the fully aligned interconnect structures 32 a, 32 b, e.g., dual damascene structures, a cap material 28, e.g., nitride material, is deposited in the recesses 26 of the minimum width features (e.g., wire structures) 14 a, 14 b, over the metallization 24 of the wide feature 14 c and on any exposed surfaces of the interlevel dielectric material 12.

The interlevel dielectric material 30 is deposited using a conventional CVD process, as an example, followed by a dual damascene process to form vias and trenches within the interlevel dielectric material 30. It should also be understood by those of skill in the art that the single damascene processes can also be performed to form the vias and the trenches. The damascene process will be fully aligned with the selected minimum width feature 14 b such that the metallization 24 of the wide feature 14 c and the alternative metal material 18 of a selected minimum width feature 14 b will be exposed for subsequent metallization processes. The damascene structures, e.g., via and trench, are filled with a metallization material 32 comprising a liner and copper material, for example. The metallization material 32 can alternatively include other conductive material such as, e.g., aluminum, Ru, Co, etc.

Advantageously, as a minimum width is maintained between the minimum width features 14 a, 14 b, the interconnect structure 32 b will fully land on the selected minimum width feature 14 b, while not shorting to the minimum width feature 14 a. In addition, by implementing the processes described herein, the fully aligned interconnect structures 32 a, 32 b can occur in any ground rule area and, more particularly, in electrical contact with the selected minimum width feature 14 b. This will provide a more controllable process while improving line resistance in wide line structures, e.g., wire structure 14 c.

FIGS. 5-8 show structures with minimum width features and wider features, amongst other features, and respective fabrication processes in accordance with additional aspects of the present disclosure. More specifically, referring to FIG. 5, the structure 10′ includes a substrate 12, e.g., interlevel dielectric material of oxide material, with a plurality of wire structures 14 a, 14 b, 14 c. As in the previous embodiments, the wire structures 14 a, 14 b will form minimum width features, e.g., interconnect structures; whereas, the wire structure 14 c will form a wider width interconnect feature.

A liner 16, e.g., Ta, TaN, or TiN, is formed over the exposed surfaces of the interlevel dielectric material 12 including within the wire structures 14 a, 14 b, 14 c. An alternative metal material 18 is deposited over the liner 16. In embodiments, the alternative metal material is Ru or Co, as preferred examples, deposited by a conventional CVD process to fill the vias 14 a, 14 b and line the wire structure 14 c. In more specific embodiments, the alternative metal material 18 is deposited to a thickness of about 7 nm to 12 nm to ensure complete fill of the wire structures 14 a, 14 b; although other dimensions are contemplated depending on the technology node. An anneal process is performed following the deposition of the alternative metal material 18. A metallization process, e.g., copper fill process, is performed to fill the via 14 c with conductor material 24, with the alternative metal material 18 now acting as a liner in the wire structure 14 c. In embodiments, the metallization process can be a deposition of a seed layer and a copper plating process.

As shown in FIG. 6, any conductor material 24 on the surfaces of the interlevel dielectric material 12 can be removed by a conventional CMP process. In embodiments, the CMP process can also remove a portion of the alternative metal material 18. In alternative embodiments, the CMP process can completely remove the conductor material 24 on the surface of interlevel dielectric material 12, in addition to the alternative metal material 18 and the liner 16 on the surfaces of the interlevel dielectric material 12, e.g., outside of the wire structures 14 a, 14 b, 14 c. In either approach, the conductor material 24 in the wire structure 14 c will remain approximately planar (not intentionally recessed) with the surface of the interlevel dielectric material 12. This will provide improved resistance characteristics compared to conventional structures.

In FIG. 7, the alternative metal material 18 in the wire structures 14 a, 14 b, 14 c can be recessed, as shown representatively by reference numerals 26′, 26″. As in the previous embodiment, the depth of the recesses 26′, 26″ can vary depending on the technology node, e.g., the pitch spacing between the vias 14 a, 14 b to ensure minimum insulation spacing between the minimum width features 14 a, 14 b. For example, the depth of the recesses 26′, 26″ be about 5 nm to about 12 nm. The recesses 26′, 26″ can be fabricated by a RIE process or wet chemical etch process with a selective chemistry, thereby avoiding the costs associated with using a separate masking process. The conductor material 24 in the wire structure 14 c remains planar with the interlevel dielectric layer 12.

As shown in FIG. 8, the fully aligned interconnect structures 32 a, 32 b are formed in the interlevel dielectric material 30 in direct electrical contact with the minimum width feature 14 b and the wider feature 14 c. The fully aligned interconnect structures 32 a, 32 b are formed by depositing a cap material 28, e.g., nitride material, in the recesses 26′, 26″ and over any exposed surfaces of the substrate 12, followed by deposition of the interlevel dielectric material 30 and a dual damascene or multiple single damascene processes to form vias and trenches within the interlevel dielectric material 30. The damascene processes will expose the metallization of the wide feature 14 c and the alternative metal material 18 of the wide feature 14 c and a selected minimum width feature 14 b, resulting in a fully aligned via with the selected minimum width feature 14 b. The damascene structures, e.g., vias and trenches, are filled with a metallization material 32 comprising a liner and conductive materials, e.g., Cu, Al, Ru, Co, etc. This process with thus enable a combined Ru (or Co) metallization and fully aligned via for smaller node technologies.

The method(s) as described above is used in the fabrication of integrated circuit chips. The resulting integrated circuit chips can be distributed by the fabricator in raw wafer form (that is, as a single wafer that has multiple unpackaged chips), as a bare die, or in a packaged form. In the latter case the chip is mounted in a single chip package (such as a plastic carrier, with leads that are affixed to a motherboard or other higher level carrier) or in a multichip package (such as a ceramic carrier that has either or both surface interconnections or buried interconnections). In any case the chip is then integrated with other chips, discrete circuit elements, and/or other signal processing devices as part of either (a) an intermediate product, such as a motherboard, or (b) an end product. The end product can be any product that includes integrated circuit chips, ranging from toys and other low-end applications to advanced computer products having a display, a keyboard or other input device, and a central processor.

The descriptions of the various embodiments of the present disclosure have been presented for purposes of illustration, but are not intended to be exhaustive or limited to the embodiments disclosed. Many modifications and variations will be apparent to those of ordinary skill in the art without departing from the scope and spirit of the described embodiments. The terminology used herein was chosen to best explain the principles of the embodiments, the practical application or technical improvement over technologies found in the marketplace, or to enable others of ordinary skill in the art to understand the embodiments disclosed herein. 

What is claimed:
 1. A method comprising: depositing a first conductive material to fill vias of minimum feature dimensions resulting in wire structures; forming another wire structure with a larger width than the minimum feature dimensions; recessing the first conductive material for the wire structures; forming fully aligned vias with a selected one of the wire structures and the other wire structure with the larger width; and depositing conductive material in the fully aligned vias to be in electrical contact with the recessed first conductive material and conductive material of the wire structure with the larger width.
 2. The method of claim 1, wherein the first conductive material is Ru which is removed isotopically from the non-minimum width wire structure.
 3. The method of claim 1, wherein the other wire structure with the larger width is filled with second conductive material therein.
 4. The method of claim 3, further comprising forming a barrier layer and a liner under the second conductive material.
 5. The method of claim 4, further comprising forming a liner under the first conductive material in the vias of minimum feature dimensions and recessing the liner with the first conductive material.
 6. The method of claim 5, further comprising forming a cap material on a top surface of recessed first conductive material and the other wiring structure and removing the cap material over the top surface of the other wiring structure and the selected one of the wiring structure prior to forming the fully aligned vias.
 7. The method of claim 1, wherein the other wire structure with the larger width than the minimum feature dimensions is formed by etching a trench into a substrate and filling the trench with the first conductive material on sidewalls thereof, and filling remaining portions of the trench with a second conductive material over the first conductive material, followed by the recessing of the first conductive material in the trench and for the forming of the wiring structures.
 8. The method of claim 1, further comprising: lining the other wire structure with the first conductive material; filling the other wire structure with second conductive material therein; and recessing the first conductive material when recessing the first conductive material in the wire structures of minimum feature dimensions.
 9. A method comprising: forming a plurality of minimum ground rule conductive structures formed in a dielectric material each of which comprises a recessed conductive material therein; forming at least one conductive structure formed in the dielectric material which is wider than the plurality of minimum ground rule conductive structures; forming an etch stop layer over a surface of the dielectric layer with openings to expose the conductive material of the least one conductive structure and the recessed conductive material of a selected minimum ground rule conductive structure; and forming an upper conductive material fully aligned with and in direct electrical contact with the at least one conductive structure and the selected minimum ground rule conductive structure, through the openings of the etch stop layer, wherein the etch stop layer is formed directly on the recessed conductive material of another selected minimum ground rule conductive structure and the opening exposes the recessed conductive material of the selected minimum ground rule conductive structure and partly exposes an upper surface of the conductive material of the least one conductive structure.
 10. The method of claim 9, wherein the recessed conductive material is Ru or Co.
 11. The method of claim 9, further comprising planarizing conductive material of at least one conductive structure to be planar with the dielectric material.
 12. The method of claim 9, further comprising forming a recessed liner under the conductive material, wherein the upper conductive material is in electrical contact with the recessed liner and the conductive material.
 13. A method comprising: forming a plurality of minimum ground rule structures each of which comprises a recessed conductive material and having a minimum insulator spacing therebetween; forming at least one wiring structure having a larger dimension than the plurality of minimum ground rule structures, the at least one wiring structure comprising a liner material and a conductive material which is different than the recessed conductive material; and forming an upper interconnect structure fully aligned with and in direct electrical contact with a selected minimum ground rule structure and the at least one wiring structure.
 14. The method of claim 13, wherein the recessed conductive material is Ru or Co.
 15. The method of claim 13, further comprising planarizing conductive material of the at least one wiring structure to be planar with a dielectric material which is for a same wiring level as the plurality of minimum ground rule structures. 